dtc323tu / dtc323tk / dtc323ts t r ansistors rev . b 1/2 600ma / 15v digit al transistors (with built-in resistors) dtc323tu / dtc323tk / dtc323ts z a pplic a t ions muting, inverter , interface z f eatu r es in addition to the features of regular digit a l transistors, 1) lo w v ce (sa t ) m a kes thes e trans i stors ideal for m u ting circuit s . (t y p . 0.04v at i c /i b = 50ma/2.5ma) 2) t hey can be used at high current. (i cma x . = 600ma) z s t ru ctu r e npn epit a xial planar silicon transistor (resistor built-in ty pe) z packag in g sp ecificatio n s part no. dtc323tu umt3 taping t106 3000 dtc323tk smt3 taping t146 3000 dtc323ts spt taping tp 5000 ?? ? ? ?? package packaging type code basic ordering unit (pieces) z equiv a le nt c i rc uit c b r 1 =2.2k ? e r 1 e : emitter c : collector b : base z ex te rna l dime ns ions (unit : mm) abbreviated symbol : h02 abbreviated symbol : h02 (1) emitter (2) base (3) collector (1) emitter (2) base (3) collector rohm : smt3 eiaj : sc-59 rohm : umt3 eiaj : sc-70 dtc323tu dtc323tk (1) emitter (2) collector (3) base rohm : spt eiaj : sc-72 dtc323ts abbreviated symbol : c323ts 0.45 2.5 (1) (2) (3) (15min.) 5.0 3.0 3min. 0.45 0.5 4.0 2.0 0.2 0.15 0.1min. 0.9 0.7 1.25 2.1 0.3 ( 3 ) 0.65 ( 2 ) 2.0 1.3 ( 1 ) 0.65 ( 2 ) ( 1 ) 2.8 1.6 0.4 ( 3 ) 2.9 1.9 0.95 0.95 0.8 0.15 0.3min. 1.1 each lead has same dimensions each lead has same dimensions
dtc323tu / dtc323tk / dtc323ts t r ansistors rev . b 2/2 z a b solute maximum ratings (t a= 25 c) parameter symbol v cbo v ceo v ebo i c pc tj tstg limits 30 15 5 600 200 300 dtc323tu / dtc323tk dtc323ts 150 ? 55 to + 150 unit v v v ma mw collector-base voltage collector-emitter voltage emitter-base voltage collector current collector power dissipation junction temperature storage temperature c c z extern al ch aracteristics (t a= 25 c) parameter symbol min. typ. max. unit conditions bv cbo bv ceo bv ebo i cbo i ebo v ce(sat) h fe f t r 1 30 15 5 ? ? ? 100 ? 1.54 ? ? ? ? ? 40 250 200 2.2 ? ? ? 0.5 0.5 80 600 ? 2.86 v v v a a mv ? mhz k ? i c = 50 a i c = 1ma i e = 50 a v cb = 20v v eb = 4v i c /i b = 50ma/2.5ma i c = 50ma , v ce = 5v v ce = 10v , i e = ? 50ma , f = 100mhz ? ron ? 0.65 ?? v i = 7v , r l = 1k ? , f = 1khz ? collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current collector-emitter saturation voltage dc current transfer ratio transition frequency input resistance ? characteristics of built-in transistor output on resistance z electrical ch aracteristics cu rv es 1k 500 200 100 50 20 10 5 2 1 1m 2m 5m 10m 20m 5 0m 100m 200m 500m v ce = 5v fig.1 dc current gain vs. collector current dc current gain : h fe collector current : i c (a) ta = 100 c ta = 25 c ta = ? 40 c 1 500m 200m 100m 50m 20m 10m 5m 2m 1m 1m 2m 5m 10m 20m 50m 100m 200m 500m i c /i b = 20/1 fig.2 collector-emitter saturation voltage vs. collector current collector saturation voltage : v ce(sat) (v) collector current : i c (a) ta = 100 c ta = 25 c ta = ? 40 c 100 50 20 10 5 2 1 500m 200m 100m 100m 200m 500m 1 2 5 1 0 2 0 5 0 1 00 fig.3 on resistance vs. input voltage on resistance : r on ( ? ) input voltage : v i (v) ta = 25 c f = 1khz r l = 1k ? h fe = 250(5v/50ma) in out gnd v l r on = r l v i / v o ? 1 v i r l v o fig.4 output "on" resistance (r on ) measurement circuit
appendix appendix1-rev1.1 the products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. notes no technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of rohm co.,ltd. the contents described herein are subject to change without notice. the specifications for the product described in this document are for reference only. upon actual use, therefore, please request that specifications to be separately delivered. application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. rohm co.,ltd. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by rohm co., ltd. is granted to any such buyer. products listed in this document are no antiradiation design. about export control order in japan products described herein are the objects of controlled goods in annex 1 (item 16) of export trade control order in japan. in case of export from japan, please confirm if it applies to "objective" criteria or an "informed" (by miti clause) on the basis of "catch all controls for non-proliferation of weapons of mass destruction.
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